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| inchange semiconductor product specification silicon pnp power transistors BDX78 description ? with to-220c package ? complement to type bdx77 applications ?medium power switching ?amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -8 a i cm collector current-peak t p =10ms -12 a i b base current -3 a p tot total power dissipation t mb =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 70 k/w
inchange semiconductor product specification 2 silicon pnp power transistors BDX78 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-0.2a; i b =0 -80 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat-1 collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-6a; i b =-0.6a -1.5 v v besat base-emitter saturation voltage i c =-6a; i b =-0.6a -2.0 v v be base-emitter on voltage i c =-3a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =-40v; i e =0 -0.1 ma i ceo collector cut-off current v ce =-30v; i b =0 -0.2 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.5 ma f t transition frequency i c =-0.3a ; v ce =-3v 7 mhz h fe dc current gain i c =-1a ; v ce =-2v 30 switching times t on turn-on time 1.0 | s t off turn-off time i c =2a i b1 =-i b2 =0.2a 2.0 | s inchange semiconductor product specification 3 silicon pnp power transistors BDX78 package outline fig.2 outline dimensions |
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